- patented trench schottky technology - excellent high temperature stability - low forward voltage - lower power loss/ high efficiency - high forward surge capability - ideal for automated placement - halogen-free according to iec 61249-2-21 definition molding compound meets ul 94 v-0 flammability rating packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test symbol unit v rrm v i f(av) a i f = 10a i f = 20a i f = 10a i f = 20a t j = 25c a t j = 125c ma r jl c/w t j c t stg c document number: ds_d1410086 version: d15 instantaneous forward voltage (note 1) 0.52 0.42 - v f t j = 125c case: to-277a (smpc) polarity: as marked weight: 0.095g (approximately) 0.43 - marking code 20u60 maximum average forward rectified current 20 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load storage temperature range - 55 to +150 typical thermal resistance 10 - 100 - 55 to +150 instantaneous reverse current at rated reverse voltage i r a - - min typ max v - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. i fsm 280 - 500 0.33 - t j = 25c trench schottky rectifier 60 maximum repetitive peak reverse voltage to-277a (smpc) typical applications TSP20U60S taiwan semiconductor features mechanical data - moisture sensitivity level: level 1, per j-std-020 note 1: pulse test with pulse width = 300 s, 1% duty cycle - 0.48 0.58 - maximum ratings and electrical characteristics (t a = 25c unless otherwise noted) parameter TSP20U60S operating junction temperature range -
(t a = 25c unless otherwise noted) document number: ds_d1410086 version: d15 TSP20U60S taiwan semiconductor ratings and characteristics curves 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 t j =25 o c t j =100 o c t j =125 o c t j =150 o c fig. 3 typical reverse characteristics instantaneous reverse current (ma) percent of rated peak reverse voltage (%) 100 1000 10000 0.1 1 10 100 f=1.0mhz v sig =50mv p-p fig. 4 typical junction capacitance capacitance (pf) reverse voltage (v) 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 t j =25 o c t j =125 o c t j =150 o c t j =100 o c fig. 2 typical forward characteristics instantaneous forward current (a) forward voltage (v) 0 5 10 15 20 25 0 25 50 75 100 125 150 with heatsink 30mm x 30mm 4 oz. pad pcb fig.1 forward current derating curve average forward current (a) lead temperature ( o c) TSP20U60S c0g green compound ? code packing ? code part ? no.
min max min max a 5.650 5.750 0.222 0.226 b 6.350 6.650 0.250 0.262 c 4.550 4.650 0.179 0.183 d 3.540 3.840 0.139 0.151 e 4.235 4.535 0.167 0.179 f 1.850 2.150 0.073 0.085 g 3.170 3.470 0.125 0.137 h 1.043 1.343 0.041 0.053 i 1.000 1.300 0.039 0.051 j 1.930 2.230 0.076 0.088 k 0.175 0.325 0.007 0.013 l 1.000 1.200 0.039 0.047 symbol a b c d e f p/n = marking code yw = date code f = factory code document number: ds_d1410086 version: d15 6.80 1.04 marking diagram suggested pad layout unit (mm) 4.80 4.72 1.40 1.27 unit (inch) TSP20U60S taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) to-277a (smpc) 0.189 0.186 0.055 0.050 0.268 0.041
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